Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2011-01-11
2011-01-11
Pham, Ly D (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S157000, C365S171000
Reexamination Certificate
active
07869266
ABSTRACT:
A multi-state low-current-switching magnetic memory element (magnetic memory element) comprising a free layer, two stacks, and a magnetic tunneling junction is disclosed. The stacks and magnetic tunneling junction are disposed upon surfaces of the free layer, with the magnetic tunneling junction located between the stacks. The stacks pin magnetic domains within the free layer, creating a free layer domain wall. A current passed from stack to stack pushes the domain wall, repositioning the domain wall within the free layer. The position of the domain wall relative to the magnetic tunnel junction corresponds to a unique resistance value, and passing current from a stack to the magnetic tunnel junction reads the magnetic memory element's resistance. Thus, unique memory states may be achieved by moving the domain wall.
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Keshtbod Parviz
Malmhall Roger Klas
Ranjan Rajiv Yadav
Avalanche Technology, Inc.
Imam Maryam
IPxLaw Group LLP
Pham Ly D
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