Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-02-01
2008-12-02
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
Reexamination Certificate
active
07459737
ABSTRACT:
A magnetic memory10includes a memory layer21for holding information by a magnetization state of a magnetic material, wherein the memory layer21is composed of at least magnetic layers16, 18of two layers and a nonmagnetic layer17interposed between the magnetic layers16, 18of two layers, one magnetic layer18of the magnetic layers16, 18of two layers has a large product of a magnetization damping constant, a magnetization amount and magnetic anisotropy and a small product of the magnetization amount and the magnetic anisotropy as compared with those of the other magnetic layer. Also, information is recorded on the magnetic memory device10with application of an electric current flowing in the memory layer21. Further, a magnetic memory includes the magnetic memory device10to record information with application of an electric current flowing in the recording layer21. There are provided a magnetic memory device capable of recording information with application of a low electric current and a magnetic memory device driving method for recording and reading information on and from the magnetic memory device and a magnetic memory including the magnetic memory device.
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patent: 3540047 (1970-11-01), Walser et al.
patent: 6639291 (2003-10-01), Sin et al.
patent: 6744086 (2004-06-01), Daughton et al.
patent: 6879514 (2005-04-01), Hosomi et al.
patent: 2003-017782 (2003-01-01), None
Ohmori Hiroyuki
Yagami Kojiro
Sony Corporation
Weiss Howard
Wolf Greenfield & Sacks P.C.
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