Low-current and high-speed phase-change memory devices and...

Details Low-current and high-speed phase-change memory devices and... Low-current and high-speed phase-change memory devices and...

2005-11-22

2005-11-22

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S148000, C365S113000

Reexamination Certificate

active

06967865

ABSTRACT:
Phase-change memories in which phase is changed by varying the resistance by a small amount are provided. In the phase-change memory, a set state is defined as a state where amorphous nuclei are formed in a phase-change layer of a memory cell and the phase-change layer has an initial resistance that is higher than in a crystalline matrix, and a reset state is defined as a state where the number and/or the density of the amorphous nuclei are greater than those in the set state and a resistance is higher than in the set state. A current for writing the reset and set states is reduced to several hundred microamperes, and a period required for writing the reset and set states is reduced to several tens of nanoseconds to several hundred nanoseconds.

REFERENCES:
patent: 6570784 (2003-05-01), Lowrey
patent: 6816404 (2004-11-01), Khouri et al.
patent: 6831856 (2004-12-01), Pashmakov
patent: 6867425 (2005-03-01), Wicker
patent: 6885602 (2005-04-01), Cho et al.

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