Batteries: thermoelectric and photoelectric – Photoelectric – Cells
Reexamination Certificate
2011-06-14
2011-06-14
Ridley, Basia (Department: 1725)
Batteries: thermoelectric and photoelectric
Photoelectric
Cells
C438S096000, C438S097000
Reexamination Certificate
active
07960644
ABSTRACT:
Methods for fabricating solar cells without the need to perform gasification of metallurgical-grade silicon are disclosed. Consequently, the costs and health and environmental hazards involved in fabricating the solar or silicon grade silicon are being avoided. A solar cell structure comprises a metallurgical grade doped silicon substrate and a thin-film structure formed over the substrate to form a p-i-n junction with the substrate. The substrate may be doped p-type, and the thin film structure may be an intrinsic amorphous layer formed over the substrate and an n-type amorphous layer formed over the intrinsic layer.
REFERENCES:
patent: 3961997 (1976-06-01), Chu
patent: 3969163 (1976-07-01), Wakefield
patent: 4077818 (1978-03-01), Chu
patent: 4084024 (1978-04-01), Schumacher
patent: 4270018 (1981-05-01), Gibbons
patent: 4450316 (1984-05-01), Hamakawa et al.
patent: 4496788 (1985-01-01), Hamakawa et al.
patent: 4528082 (1985-07-01), Moustakas et al.
patent: 4668840 (1987-05-01), Kiyama
patent: 4689438 (1987-08-01), Fukatsu et al.
patent: 4755475 (1988-07-01), Kiyama
patent: 4818337 (1989-04-01), Barnet
patent: 4981525 (1991-01-01), Kiyama
patent: 5066340 (1991-11-01), Iwamoto
patent: 5114498 (1992-05-01), Okamoto
patent: 5155051 (1992-10-01), Noguchi
patent: 5213628 (1993-05-01), Noguchi
patent: 5370747 (1994-12-01), Noguchi
patent: 5401331 (1995-03-01), Ciszek
patent: 5401336 (1995-03-01), Noguchi
patent: 5455430 (1995-10-01), Noguchi
patent: 5538902 (1996-07-01), Izu
patent: 5549763 (1996-08-01), Sano
patent: 5584941 (1996-12-01), Nishida
patent: 5614785 (1997-03-01), Wallace
patent: 5639314 (1997-06-01), Kura
patent: 5693957 (1997-12-01), Sano
patent: 5705828 (1998-01-01), Noguchi
patent: 5785769 (1998-07-01), Ciszek
patent: 5907766 (1999-05-01), Swanson et al.
patent: 5935344 (1999-08-01), Endo
patent: 5951785 (1999-09-01), Uchihashi
patent: 6060400 (2000-05-01), Oehrlein et al.
patent: 6100166 (2000-08-01), Sakaguchi
patent: 6124545 (2000-09-01), Bauer et al.
patent: 6175512 (2001-01-01), Hagihara
patent: 6207890 (2001-03-01), Nakai
patent: 6252785 (2001-06-01), Hagihara
patent: 6340788 (2002-01-01), King et al.
patent: 6342669 (2002-01-01), Sakai
patent: 6380479 (2002-04-01), Nakai
patent: 6384316 (2002-05-01), Shinohara
patent: 6402974 (2002-06-01), Trevor et al.
patent: 6410843 (2002-06-01), Kishi
patent: 6465727 (2002-10-01), Maruyama
patent: 6521883 (2003-02-01), Isomura
patent: 6667434 (2003-12-01), Morizane
patent: 6749685 (2004-06-01), Coleman
patent: 6849917 (2005-02-01), Maruyama
patent: 6878921 (2005-04-01), Taguchi
patent: 7030413 (2006-04-01), Nakamura
patent: 7164150 (2007-01-01), Terakawa
patent: 7781669 (2010-08-01), Terakawa
patent: 7863518 (2011-01-01), Terakawa
patent: 2002/0175143 (2002-11-01), Cooper
patent: 2003/0203547 (2003-10-01), Sakaguchi
patent: 2004/0118337 (2004-06-01), Mizutani et al.
patent: 2005/0109388 (2005-05-01), Murakami et al.
patent: 2006/0283499 (2006-12-01), Terakawa et al.
patent: 2007/0166219 (2007-07-01), Arimoto
patent: 2008/0121280 (2008-05-01), Carnel
patent: 1460693 (2004-09-01), None
Sawada, Toru et al., “High-Efficiency a-Si/c-Si Heterojunction Solar Cell”, 1994, IEEE, CH3365-4/94/0000-1219, pp. 1219-1226.
Bathey, B.R. et al., “Review Solar-grade silicon”, 1982, Journal of Materials Science, vol. 17, pp. 3077-3096.
Gribov, B.G. et al., “Preparation of High-Purity Silicon for Solar Cells”, 2003, Inorganic Materials, vol. 39, No. 7, pp. 653-662.
Green, Martin A. et al,, “High-Efficiency Silicon Solar Cells”, May 1984, IEEE Transactions on Electron Devices, vol. ED-31, No. 5, pp. 679-683.
Understanding and Implementation of Hydrogen Passivation of Defects in String Ribbon Silicon for High-Efficiency, Manufacturable, Silicon Solar Cells; Vijay Yelundur PhD Thesis at GeorgiaTech; Nov. 2003.
20.7% Highest Efficiency Large Area (100.5cm2) HIT Cell; Hitoshi Sakata, Takuo Nakai, Toshiaki Baba, Mikio Taguchi, Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE 2000.
Silicon-Film Photovoltaic Manufacuring Technology, Final Technical Status Report Jan. 1, 1992-Jul. 31, 1995. Sandra R. Collins, Robert B. Hall, and James A. Rand, National Renewable Energy Laboratory.
Comparative Study of Rapid and Classical Thermal Phosphorus Diffusion on Polycrystalline Silicon This Films, S. Bourdais et al., Solar Energy Materials and Solar Cells, 65, pp. 487-493, 2001.
Development of an Emitter for Industrial Silicon Solar Cells Using the Doped Oxide Solid Source Diffusion Technique, R. Chaoui, et al., Renewable Energy, 23, pp. 417-428, 2001.
Tan, J et al., “On The Electronic Improvement of Multiple-Crystaline Silicon via Gettering and Hydrogenation”, online 9/5/7,Wiley InterScience, John Wiley & Sons, Ltd p. 129-134.
Lu, Meijun et al., “Interdigitated Back Contact Silicon Heterojunction (IBC-SHJ) Solar Cell”,2007, Materials Research So., Symposium Proceedings, v989, 0989-A24-05, p. 1-6.
Characterizing Device Efficiency Potential from Industrial Multi-Crystalline Cell Structures Composed of Solar Grade Silicon, Ethan A. Good, Dow Corning Corporation, 2008.
Advantages and shortcomings of UMG silicon in photovoltaic device production, Rainer Krause et al., eighth print edition of Photovoltaics International journal.
Ayad Tamir
Bach Joseph
Ridley Basia
Sunpreme, Ltd.
LandOfFree
Low-cost multi-junction solar cells and methods for their... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Low-cost multi-junction solar cells and methods for their..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low-cost multi-junction solar cells and methods for their... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2634181