Low cost mixed memory integration with substantially coplanar ga

Details Low cost mixed memory integration with substantially coplanar ga Low cost mixed memory integration with substantially coplanar ga

1999-11-23

2000-10-31

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Semiconductive

365 51, G11C 1300

Patent

active

061412422

ABSTRACT:
A semiconductor memory device including at least three of the following cell structures: an NVRAM cell structure, an FERAM cell structure, a DRAM cell structure, and an SRAM cell structure. The cell structures are disposed on the same substrate and preferably have gate surfaces which are substantially coplanar. An NVRAM cell structure. Processes for forming a memory structure that includes NVRAM, FERAM, DRAM, and/or SRAM memory structures on one substrate and processes for forming a new NVRAM cell structure.

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