Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2010-07-27
2011-11-22
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S637000, C438S638000, C438S672000
Reexamination Certificate
active
08062976
ABSTRACT:
A method is for forming a vertical interconnection through a dielectric layer between upper and lower electrically conductive layers of an integrated circuit. The method includes forming an opening through the dielectric layer and placing a solidifiable electrically conductive filler into the opening via a printing technique. The solidifiable electrically conductive filler is solidified to thereby form a solidified electrically conducting filler in the opening. A metallization layer is formed over the dielectric layer and the solidified electrically conducting filler to thereby form the vertical interconnection through the dielectric layer between the upper and lower electrically conductive layers of the integrated circuit.
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Malagnino Nunzia
Occhipinti Luigi Giuseppe
Scaldaferri Rossana
Vecchione Raffaele
Volpe Maria Viviana
Allen Dyer Doppelt Milbrath & Gilchrist, P.A.
Jorgenson Lisa K.
Le Dung A.
STMicroelectronics S.R.L.
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