Static information storage and retrieval – Format or disposition of elements
Reexamination Certificate
2011-04-26
2011-04-26
Mai, Son L (Department: 2827)
Static information storage and retrieval
Format or disposition of elements
C365S063000, C365S130000, C365S163000, C365S175000
Reexamination Certificate
active
07933133
ABSTRACT:
A high-density memory device is fabricated three-dimensionally in layers. To keep points of failure low, address decoding circuits are included within each layer so that, in addition to power and data lines, only the address signal lines need be interconnected between the layers.
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International Search Report and Written Opinion for PCT/US2008/082503 mailed Feb. 25, 2009.
Langdo Thomas A.
Pitera Arthur J.
Shepard Daniel R.
Bingham & McCutchen LLP
Contour Semiconductor, Inc.
Mai Son L
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