Low-cost double-structure substrates and methods for their...

Details Low-cost double-structure substrates and methods for their... Low-cost double-structure substrates and methods for their...

2009-05-21

2011-10-11

Smith, Matthew (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S347000, C257SE29134, C257SE21179, C438S283000, C438S458000, C438S588000

Reexamination Certificate

active

08035163

ABSTRACT:
In preferred embodiments, the invention provides substrates that include a support, a first insulating layer arranged on the support, a non-mono-crystalline semi-conducting layer arranged on the first insulating layer, a second insulating layer arranged on the non-mono-crystalline semi-conducting layer; and top layer disposed on the second insulating layer. Additionally, a first gate electrode can be formed on the top layer and a second gate electrode can be formed in the non-mono-crystalline semi-conducting layer. The invention also provides methods for manufacture of such substrates.

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