Static information storage and retrieval – Read/write circuit – Including level shift or pull-up circuit
Patent
1999-02-26
2000-10-10
Nelms, David
Static information storage and retrieval
Read/write circuit
Including level shift or pull-up circuit
36523006, G11C 700
Patent
active
061308447
ABSTRACT:
A boosted voltage driving circuit includes an inverter circuit with positive feedback and a selective breaking circuit. The selective breaking circuit disconnects the positive feedback from the output load during an operation phase of the boosted voltage driving circuit in order to reduce energy consumption. In a preferred embodiment, the boosted voltage driving circuit is the final stage of a decoder circuit for selecting and deselecting a line or column of a memory array, and the positive feedback is disconnected during a deselection phase in which the line or column is deselected. The present invention also provides a boosted voltage driving circuit that includes first, second, and third transistors and a selective breaking circuit. The first transistor is connected between a supply voltage and an output node, the second transistor is connected between the output node and ground, and the third transistor is connected between the supply voltage and the gate of the first transistor. Further, the selective breaking circuit is connected between the output node and the gate of the third transistor to disconnect the gate of the third transistor from the output node during an operation phase of the boosted voltage driving circuit.
REFERENCES:
patent: 5265052 (1993-11-01), D'Arrigo et al.
patent: 5606530 (1997-02-01), Kiriaki
patent: 5751654 (1998-05-01), Pascucci
patent: 5886541 (1999-03-01), Asato
Gaibotti Maurizio
Zerilli Tommaso
Bongini Stephen C.
Galanthay Theodore E.
Lam David
Nelms David
STMicroelectronics S.r.l.
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