Low compressive force, non-silicone, high thermal conducting...

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material

Reexamination Certificate

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C257S706000

Reexamination Certificate

active

07816785

ABSTRACT:
An improved thermal interface material for semiconductor devices is provided. More particularly, low compressive force, non-silicone, high thermal conductivity formulations for thermal interface material is provided. The thermal interface material comprises a composition of non-silicone organics exhibiting thermal conductivity of approximately 5.5 W/mK or greater and a compressed bond-line thickness of approximately 100 microns or less using a compressive force of approximately 100 psi or less.

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