Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2009-01-22
2010-10-19
Clark, S. V (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S706000
Reexamination Certificate
active
07816785
ABSTRACT:
An improved thermal interface material for semiconductor devices is provided. More particularly, low compressive force, non-silicone, high thermal conductivity formulations for thermal interface material is provided. The thermal interface material comprises a composition of non-silicone organics exhibiting thermal conductivity of approximately 5.5 W/mK or greater and a compressed bond-line thickness of approximately 100 microns or less using a compressive force of approximately 100 psi or less.
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Iruvanti Sushumna
Kemink Randall G.
Kumar Rajneesh
Ostrander Steven P.
Singh Prabjit
Clark S. V
International Business Machines - Corporation
Petrokaitis Joseph
Roberts Mlotkowski Safran & Cole P.C.
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