Low-carbon-doped silicon oxide film and damascene structure...

Details Low-carbon-doped silicon oxide film and damascene structure... Low-carbon-doped silicon oxide film and damascene structure...

2007-09-18

2007-09-18

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S622000, C438S623000, C438S624000, C257S758000, C257S759000, C257S760000

Reexamination Certificate

active

10852637

ABSTRACT:
A method of forming an interconnect for a semiconductor device using triple hard layers, comprises: forming a first hard layer serving as an etch stop layer on a metal interconnect-formed dielectric layer; forming a second hard layer on the first hard layer; forming a dielectric layer on the second hard layer; forming a third hard layer on the dielectric layer; forming a hole through the third and second hard layers, the dielectric layer, and the first hard layer; and filling the hole with metal to establish an interconnect. The second and third hard layers are each made of carbon-doped silicon oxide formed from a source gas and a redox gas, while controlling the carbon content in the second hard layer as a function of a flow rate of the redox gas.

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