Low capacitance input/output integrated circuit

Details Low capacitance input/output integrated circuit Low capacitance input/output integrated circuit

1997-08-18

2000-06-06

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257335, H01L 2362

Patent

active

060722185

ABSTRACT:
A low capacitance input/output integrated circuit and a method by which the low capacitance input/output integrated circuit is formed. Formed upon a semiconductor substrate is an input/output integrated circuit which contains a minimum of one integrated circuit device. The integrated circuit device, in turn, possesses at minimum a source elect rode and a drain electrode of the same polarity. Coincident with the source electrode and the drain electrode are normally at least one ion implant of polarity opposite to the source electrode and the drain electrode. At least a portion of the drain electrode is masked when the ion implant(s) of polarity opposite to the source electrode and the drain electrode are provided into the source electrode region and the drain electrode region of the integrated circuit device(s).

REFERENCES:
patent: 3846822 (1974-11-01), Riley et al.
patent: 3909320 (1975-09-01), Cauge et al.
patent: 4280855 (1981-07-01), Bertin et al.
patent: 5273922 (1993-12-01), Tsoi
patent: 5338960 (1994-08-01), Beasom
patent: 5869872 (1999-02-01), Asai et al.

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