Low capacitance floating diffusion structure for a solid state i

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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257291, 257292, 257293, 257296, 257300, 257301, 257431, 257459, 257532, 257773, 257776, 437 3, 437 50, 437 53, 437175, H01L 31062, H01L 3112

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055919979

ABSTRACT:
This invention concerns a novel structure to create a low capacitance floating diffusion without changing or adding steps to the image sensor fabrication process. It consists of incorporation of a novel structure at the contact area between the floating diffusion and the gate electrode that reduces the junction capacitance of the floating diffusion and improves the sensitivity of the device (the structure features overlapping contact, gate, metalization and n-type regions which provide the electrical contact between the floating diffusion and the gate). Additionally, the structure has a low resistance diffusion region that is self aligned with a gate electrode.

REFERENCES:
patent: 5387536 (1995-02-01), Guidash et al.
K. Miwada, et al, "A 100 MHz Data-Rate, 5000-element CCD Linear Image Sensor with Reset Pulse Level Adjustment Circuit", IEEE Int. Solid-St. Circ. Conf. Tech. Digest, pp. 168-169, 275, 1992.
U.S. Patent Application Serial No. 08/188,500, Filed Jan. 26, 1994, entitled Low Capacitance Floating Diffusion Structure for a Solid State Image Sensor by R. M. Guidash and A. S. Ciccarelli.

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