Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-03-27
2000-09-05
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257335, 257357, 257360, H01L 2776
Patent
active
061147311
ABSTRACT:
Disclosed is an electrostatic discharge protection transistor having low input capacitance and method for making the same. The electrostatic discharge protection transistor includes a semiconductor substrate having a diffusion well and a source that is defined in the diffusion well. Further included is a drain that has a first sidewall, a second sidewall, and a lower diffusion floor. The first sidewall is located proximate to a channel region that lies between the source and the drain. Also, a polysilicon gate is disposed over the surface of the semiconductor substrate such that the polysilicon gate is defined between the source and the drain. Wherein the first sidewall of the drain is defined in the diffusion well and the lower diffusion floor of the drain is defined outside of the diffusion well and inside the semiconductor substrate.
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Abraham Fetsum
Adaptec, Inc.
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