Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-10-16
2007-10-16
Quach, T. N. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S401000, C257SE29136
Reexamination Certificate
active
11275513
ABSTRACT:
Disclosed are planar and non-planar field effect transistor (FET) structures and methods of forming the structures. The structures comprise segmented active devices (e.g., multiple semiconductor fins for a non-planar transistor or multiple semiconductor layer sections for a planar transistor) connected at opposite ends to source/drain bridges. A gate electrode is patterned on the segmented active devices between the source/drain bridges such that it has a reduced length between the segments (i.e., between the semiconductor fins or sections). Source/drain contacts land on the source/drain bridges such that they are opposite only those portions of the gate electrode with the reduced gate length. These FET structures can be configured to simultaneously maximize the density of the transistor, minimize leakage power and maintain the parasitic capacitance between the source/drain contacts and the gate conductor below a preset level, depending upon the performance and density requirements.
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Anderson Brent A.
Nowak Edward J.
Gibb & Rahman, LLC
Quach T. N.
Sabo, Esq. William D.
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