Low basal plane dislocation bulk grown SiC wafers

Details Low basal plane dislocation bulk grown SiC wafers Low basal plane dislocation bulk grown SiC wafers

2007-11-13

2007-11-13

Hiteshew, Felisa (Department: 1722)

Chemistry of inorganic compounds

Silicon or compound thereof

Oxygen containing

C423S324000, C423S345000, C423S348000, C423S349000

Reexamination Certificate

active

11147645

ABSTRACT:
A high quality single crystal wafer of SiC is disclosed. The wafer has a diameter of at least about 3 inches (75 mm) and at least one continuous square inch (6.25 cm2) of surface area that has a basal plane dislocation volume density of less than about 500 cm−2for a 4 degree off-axis wafer.

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