Low aspect ratio magnetoresistive tunneling junction

Details Low aspect ratio magnetoresistive tunneling junction Low aspect ratio magnetoresistive tunneling junction

1997-12-18

1999-09-28

Nelms, David

Static information storage and retrieval

Systems using particular element

Magnetoresistive

365173, G11C 1100

Patent

active

059598808

ABSTRACT:
A low aspect ratio magnetoresistive tunneling junction memory cell includes two layers of magnetoresistive material separated by electrically insulating material so as to form a magnetoresistive tunneling junction. An exchange interaction layer is sandwiched between one layer of the junction and a third layer of magnetoresistive material so as to pin the magnetic vector of one layer of the junction anti-parallel to a magnetic vector in the third layer so that magnetostatic interaction between the junction layers is canceled and the magnetic vector of the one layer is free to move in either of the two directions parallel to the polarization axis. Antiferromagnetic material is positioned adjacent the third layer so as to fix the magnetic vector in the third layer uni-directionally parallel to the polarization axis.

REFERENCES:
patent: 5595830 (1997-01-01), Daughton
patent: 5764567 (1998-06-01), Parkin
patent: 5793697 (1998-08-01), Scheuerlein
patent: 5801984 (1998-09-01), Parkin

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