Low and high voltage CMOS devices and process for fabricating sa

Details Low and high voltage CMOS devices and process for fabricating sa Low and high voltage CMOS devices and process for fabricating sa

1996-09-06

1999-03-09

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257369, 257389, 257396, 257399, 257400, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

058805028

ABSTRACT:
CMOS devices and process for fabricating low voltage, high voltage, or both low voltage and high voltage CMOS devices are disclosed. According to the process, p-channel stops and source/drain regions of PMOS devices are implanted into a substrate in a single step. Further, gates for both NMOS and PMOS devices are doped with n-type dopant and NMOS gates are self-aligned.

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