Static information storage and retrieval – Read/write circuit – Testing
Patent
1994-06-29
1996-12-10
Zarabian, A.
Static information storage and retrieval
Read/write circuit
Testing
36523006, G11C 700
Patent
active
055838162
ABSTRACT:
According to the present invention, a block of a static memory device, or some portion thereof, is selected to be subjected to a long write test. Choosing a portion of the static memory device, such as a block, offers the advantage of limiting current switching transients as well as recovery time following the long write test. All bitlines of the selected block are written to simultaneously for a period of time; all the wordlines within the selected block are disabled during this time so that no memory cell is selected. The bitlines of the selected block are recovered in two phases so that current switching transients are limited to a reasonable value and writing to the bitlines may be staggered. Finally, the selected block is read disturbed by cycling row fast through the selected block.
REFERENCES:
patent: 4672582 (1985-05-01), Nishimura
patent: 4879690 (1989-11-01), Anami
patent: 5241500 (1993-08-01), Barth
patent: 5416741 (1995-05-01), Ohsawa
patent: 5475635 (1995-12-01), Nogle
Galanthay Theodore E.
Jorgenson Lisa K.
Larson Renee M.
SGS-Thomson Microelectronics Inc.
Zarabian A.
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