Long write test

Static information storage and retrieval – Read/write circuit – Testing

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

36523006, G11C 700

Patent

active

055838162

ABSTRACT:
According to the present invention, a block of a static memory device, or some portion thereof, is selected to be subjected to a long write test. Choosing a portion of the static memory device, such as a block, offers the advantage of limiting current switching transients as well as recovery time following the long write test. All bitlines of the selected block are written to simultaneously for a period of time; all the wordlines within the selected block are disabled during this time so that no memory cell is selected. The bitlines of the selected block are recovered in two phases so that current switching transients are limited to a reasonable value and writing to the bitlines may be staggered. Finally, the selected block is read disturbed by cycling row fast through the selected block.

REFERENCES:
patent: 4672582 (1985-05-01), Nishimura
patent: 4879690 (1989-11-01), Anami
patent: 5241500 (1993-08-01), Barth
patent: 5416741 (1995-05-01), Ohsawa
patent: 5475635 (1995-12-01), Nogle

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Long write test does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Long write test, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Long write test will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-429657

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.