Long-Term sputtering method

Details Long-Term sputtering method Long-Term sputtering method

2005-03-01

2005-03-01

McDonald, Rodney G. (Department: 1753)

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

C204S192220, C204S192270, C204S192280, C204S192290, C204S192150

Reexamination Certificate

active

06860974

ABSTRACT:
There are provided techniques of forming a back reflecting layer with constant characteristics throughout long-term film formation and forming a metal oxide film so as to be able to maintain a current of a bottom cell and thereby keep a short-circuit current Jsc of a solar cell constant over a long period of time. A sputtering method is a method of forming a stack of a metal film and a metal oxide film, comprising the step 1 of forming a metal layer on a substrate, the step 2 of bringing a surface of the metal layer into contact with active oxygen, and the step 3 of forming a metal oxide film thereon after the step 2, wherein in the step 2 an amount of active oxygen at a first substrate position is different from that at a second substrate position.

REFERENCES:
patent: 4419533 (1983-12-01), Czubatyj
patent: 5620530 (1997-04-01), Nakayama
patent: 5998730 (1999-12-01), Shiozaki et al.
patent: 6140570 (2000-10-01), Kariya
patent: 6554973 (2003-04-01), Nakayama
patent: 20020134670 (2002-09-01), Echizen et al.
patent: 61-64874 (1986-04-01), None
patent: 2-1633363 (1990-06-01), None
patent: 6-116722 (1994-04-01), None
patent: 10-310862 (1998-11-01), None
patent: 3007758 (1999-11-01), None

Affiliated with

Also associated with

Rating

Long-Term sputtering method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Long-Term sputtering method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Long-Term sputtering method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3420254