Logical operation circuit and logical operation method

Details Logical operation circuit and logical operation method Logical operation circuit and logical operation method

2006-04-11

2006-04-11

Cho, James H. (Department: 2819)

Electronic digital logic circuitry

Function of and, or, nand, nor, or not

Field-effect transistor

C326S136000, C365S145000

Reexamination Certificate

active

07026841

ABSTRACT:
To provide a logical operation circuit and a logical operation method which can perform a logical operation using a ferroelectric capacitor. A logical operation circuit1has ferroelectric capacitors CF1and CF2and a transistor MP. The ferroelectric capacitor CF1can retain a polarization state P1corresponding to a logical operator. In an operation and storage process, a source potential Vdd corresponding to first operation target data y1=1 and a ground potential GND corresponding to second operation target data y2=0 are given to a first terminal3and a second terminal5, respectively, of the ferroelectric capacitor CF1. The polarization state of the ferroelectric capacitor CF1is thereby shifted to P4. A residual polarization state corresponding to the polarization state P4is P2. The residual polarization state changes (P1, P1, P2or P1) depending on the combination of y1and y2(0-0, 0-1, 1-0 and 1-1). In a reading process after that, an output corresponding to the residual polarization state is obtained via the transistor MP.

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Hanyu, et al., “Ferroelectric-based Functional Pass-Gate for Fine-Grain Pipeline VLSI Computation”, 2002 IEEE International Solid-State Circuits Conference Digest of Technical Papers, vol. 1, pp. 208, 209, 460; vol. 2, pp. 164, 165—Feb. 3, 2002.

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