Logic-in-memory circuit using magnetoresistive element

Details Logic-in-memory circuit using magnetoresistive element Logic-in-memory circuit using magnetoresistive element

2006-05-30

2006-05-30

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S158000

Reexamination Certificate

active

07054190

ABSTRACT:
A TMR network120using TMR elements as magnetoresistive elements is formed as a variable resistive element network by a series-parallel connection of two kinds of variable resistive elements R with resistance values that change according to an external input X or a memory input Y, as shown in an AND operation network122in FIG.5(b), wherein the total resistance value Rtotalis minimized, that is, the current I is maximized for a particular combination of the inputs. Assuming Rxiand Ryi(i=0, 1 and 2) as the resistance values of the variable resistive elements R according, respectively, to the external input X and memory input Y, the values of x and y determine the current I that flows through the network as shown in FIG.5(d). Setting a threshold value between I0and I1using a threshold detector160makes it possible to realize AND operation. The operation result is then output as a voltage value through an IV converter170.

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