Logic blocks with mixed low and regular V.sub.t MOSFET devices f

Electronic digital logic circuitry – Function of and – or – nand – nor – or not – Field-effect transistor

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326 17, 326119, H03K 190948

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active

060781955

ABSTRACT:
Logic books with mixed low V.sub.t and regular V.sub.t devices provide a performance gain without the large increase in stand-by power of the logic book. Low V.sub.t devices are used to gain speed, and regular V.sub.t devices are used to cut off the off-current of the logic book. The optimization of mixed V.sub.t configurations is important. No single path between an output and ground can be made of all low V.sub.t devices, and no single path between the output and V.sub.dd can be made of all low V.sub.t devices. Generally, devices that are connected to V.sub.dd and ground should be regular V.sub.t devices, a low V.sub.t devices should be connected closest to the output. All low V.sub.t devices should be appropriately reversely biased in their off states. Because its merits in standby power, speed and noise margin, such mixed-low-and-regular-V.sub.t logic books can have a wide use in VLSI designs (e.g., high performance microprocessor design).

REFERENCES:
patent: 4956691 (1990-09-01), Culley et al.
patent: 5150186 (1992-09-01), Pinney et al.
patent: 5426383 (1995-06-01), Kumar
patent: 5629638 (1997-05-01), Kumar
Y. Taur et al, "CMOS Scaling into the Nanometer Regime", Apr. 1997 Proc. of IEEE, vol. 85 #4, pp. 486-504.
L. Su et al, "A High-Performance 0.08 .mu.m CMOS" 1996 Symposium on VLSI Tech. Digest of Tech. Papers, pp. 12-13 No Month.
R.H.Dennard et al, "Design of Ion-Implanted MOSFET's with Very Small Physical Dimensions" IEEE Jn. of Solid State Circuits V.SC9 #5 Oct. 1974.
B. Davari et al, CMOS Scaling for High Performance and Low Power--The Next Ten Years: Proc. of IEEE, V. 83, #4, Apr. 1995 pp. 595-606.

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