Locos type field isolating film and semiconductor memory device

Details Locos type field isolating film and semiconductor memory device Locos type field isolating film and semiconductor memory device

1989-06-23

1991-11-12

James, Andrew J.

Fishing, trapping, and vermin destroying

357 2311, 357 49, 357 50, 437 61, 437 62, 437 69, 437 73, H01L 2968, H01L 2978, H01L 2992, H01L 2906

Patent

active

050652184

ABSTRACT:
A LOCOS isolation film is formed on a major surface of a semiconductor substrate. Thereafter, a new surface of the semiconductor substrate is exposed by wet etching. A resist pattern is formed on the exposed new surface. A part of the LOCOS isolation film is removed using this resist pattern, to expose the surface of the semiconductor substrate. This unsymmetrical LOCOS isolation film increases the effective area of the surface of the semiconductor substrate and preserves predetermined dielectric resistance.

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D. W. Rakowski, Oxide, Boron Isolation, May 73, pp. 3782-3783, 357*50.

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