Locos method with double polysilicon/silicon nitride spacer

Details Locos method with double polysilicon/silicon nitride spacer Locos method with double polysilicon/silicon nitride spacer

1996-03-29

1997-08-19

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

438696, 438448, H01L 2176

Patent

active

056588224

ABSTRACT:
An improved local oxidation of silicon (LOCOS) method with recessed silicon substrate and double polysilicon/silicon nitride spacer is disclosed. The present invention includes forming a pad oxide layer on a semiconductor substrate and then forming a first silicon nitride layer on the pad oxide layer. An active region is defined by patterning and etching the pad oxide layer and the first silicon nitride layer using a photoresist mask. Thereafter, a silicon oxide layer and a second silicon nitride layer is formed. Next, a polysilicon layer is deposited over the second silicon nitride layer. The polysilicon layer, the second silicon nitride layer, and the silicon oxide layer are etched back to form a double polysilicon/silicon nitride spacer. Finally, an isolation region in the substrate is formed.

REFERENCES:
patent: 5338968 (1994-08-01), Hodges et al.
patent: 5393692 (1995-02-01), Wu
patent: 5470783 (1995-11-01), Chiu et al.
patent: 5512509 (1996-04-01), Han

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