LOCOS field oxide and field oxide process using silicon nitride

Details LOCOS field oxide and field oxide process using silicon nitride LOCOS field oxide and field oxide process using silicon nitride

1996-08-01

1999-04-20

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

438439, 438297, H01L 2176

Patent

active

058952578

ABSTRACT:
A field oxide region and method of forming a field oxide region using a LOCOS process and nitride spacers formed on the sidewalls of the field oxide regions. During the LOCOS process recesses are formed in the field oxide which result in poor step coverage during successive process steps. Nitride spacers are formed on the sidewalls of the field oxide covering the recesses. The spacers provide a smooth surface over the field oxide and improved step coverage during subsequent process steps.

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patent: 5736451 (1998-04-01), Gayet
patent: 5821153 (1998-10-01), Tsai et al.
"Reverse Elevated Source/Drain (RESD) MOSFET for Deep Submicron CMOS" by J.R. Pfiester et al, IEDM 192, pp. 885-888 (No date).
"Impact of LDD Spacer Reduction On MOSFET Performance For Subium Gate I Space Pitches" by C. Mazure et al, IEDM '92, pp. 893-896. (No month).

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