Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1991-11-15
1993-12-14
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257322, 257175, 257435, H01L 2968
Patent
active
052705625
ABSTRACT:
Locking devices are made by using a floating gate cell which is put into a state of being never programmable electrically by placing a voltage limiter between its drain zone and the ground and between its source zone and the ground. The cell can no longer ever be programmed by ultra-violet rays because of the interposition of a metal pad above its control gate. A voltage limiter is made by using a Zener diode made by the joining, to the drain and source zones, of a zone with opposite doping, placed outside the channel zone and connected to the ground.
REFERENCES:
patent: 4744062 (1988-05-01), Nakamura et al.
patent: 4805138 (1989-02-01), McElroy et al.
patent: 4835111 (1989-05-01), Wright et al.
SGS-Thomson Microelectronics S.A.
Wojciechowicz Edward
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