Location selective transmutation doping on silicon wafers using

Details Location selective transmutation doping on silicon wafers using Location selective transmutation doping on silicon wafers using

1998-11-16

2000-08-08

Mulpuri, Savitri

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Involving nuclear transmutation doping

438974, H01L 21261

Patent

active

061001686

ABSTRACT:
Efficient transmutation doping of silicon through the bombardment of silicon wafers by a beam of deuterons is described. A key feature of the invention is that the deuterons are required to have an energy of at least 4 MeV, to overcome the Coulomb barrier and thus achieve practical utility. When this is done, transmutationally formed phosphorus in concentrations as high as 10.sup.16 atoms per cc. are formed from deuteron beams having a fluence as low as 10.sup.19 deuterons per square cm. As a byproduct of the process sulfur is also formed in a practical concentration range of about 10.sup.14 atoms per cc. This can be removed by annealing at temperatures in the order of 700 .degree. C. Additional sulfur continues to form as a result of the decay of P.sup.32. Because of the high energy of the deuterons, several silicon wafers may be processed simultaneously if a suitable mask is available and proper alignment is achieved. It is expected that the additional phosphorus is essentially uniformly deposited throughout the entire thickness of a wafer. Masks, either freestanding or contact, may also be used in order to limit the transmuted regions to particular desired areas.

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