Location of defects using dye penetration

Details Location of defects using dye penetration Location of defects using dye penetration

1999-07-15

2000-08-01

Pham, Hoa Q.

Optics: measuring and testing

Inspection of flaws or impurities

Surface condition

3562372, 3562371, 436 5, 436172, G01N 2100, G01N 3100

Patent

active

060974842

ABSTRACT:
A method for amplifying defects connected to a top surface of a semiconductor device comprises the steps of applying a dye, removing the dye, and applying a developing gel. The dye enters into defects connected to the top surface of the semiconductor device. After removal of the dye from the top surface and application of the developing gel, the dye contained within the defects leaches into the developing gel to form defect indications. These defect indications have a better optical visibility than the defects themselves. An apparatus for performing this method is also disclosed.

REFERENCES:
patent: 5965446 (1999-10-01), Ishikawa

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