Locally thinned fins

Details Locally thinned fins Locally thinned fins

2006-08-08

2006-08-08

Zarneke, David (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S218000, C438S294000, C438S514000, C438S410000, C438S157000, C438S283000, C438S481000, C438S156000, C438S151000

Reexamination Certificate

active

07087471

ABSTRACT:
In a FinFET integrated circuit, the fins are formed with a reduced body thickness in the body area and then thickened in the S/D area outside the body to improve conductivity. The thickening is performed with epitaxial deposition while the lower portion of the gates are covered by a gate cover layer to prevent thickening of the gates at the fin level, which may short the gate to the S/D.

REFERENCES:
patent: 6252284 (2001-06-01), Muller et al.
patent: 6413802 (2002-07-01), Hu et al.
patent: 6475869 (2002-11-01), Yu
patent: 6642090 (2003-11-01), Fried et al.
patent: 6812075 (2004-11-01), Fried et al.
patent: 6855607 (2005-02-01), Achuthan et al.
patent: 6864164 (2005-03-01), Dakshina-Murthy et al.
patent: 2004/0256647 (2004-12-01), Lee et al.
patent: 2004/0266076 (2004-12-01), Doris et al.
patent: 2004/0266077 (2004-12-01), Yeo et al.
patent: 2005/0014314 (2005-01-01), Dokumaci et al.
patent: 2005/0029603 (2005-02-01), Yu et al.
patent: 2005/0036415 (2005-02-01), Yoshida et al.

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