Localized temperature control during rapid thermal anneal

Details Localized temperature control during rapid thermal anneal Localized temperature control during rapid thermal anneal

2010-03-08

2011-12-20

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

By differential heating

C438S164000, C438S199000, C438S201000, C438S207000, C438S404000, C438S540000, C438S550000, C438S551000, C438S552000, C257S424000, C257S510000, C257S532000, C257S638000, C257SE21540

Reexamination Certificate

active

08080485

ABSTRACT:
A method of forming a semiconductor structure comprises providing a substrate and forming an insulator layer on the substrate. A first film is formed on the insulator layer. Thus, the first film can correspond to a device region of the semiconductor structure. A second film, comprising a second material that is different from the first material, is also formed on the insulator layer adjacent to the first film. The second material can comprise an isolation material (e.g., an oxide and/or nitride material) and can, for example comprise the same dielectric material as the insulator layer (e.g., silicon dioxide). The second film can correspond to an isolation region (e.g., a shallow trench isolation region) of the semiconductor structure. The second film is specifically formed with a first section having a first thickness and a second section having a second thickness that is different from the first thickness.

REFERENCES:
patent: 4525380 (1985-06-01), Arai et al.
patent: 5336641 (1994-08-01), Fair et al.
patent: 5523262 (1996-06-01), Fair et al.
patent: 5841110 (1998-11-01), Nenyei et al.
patent: 5897381 (1999-04-01), Aronowitz et al.
patent: 5956603 (1999-09-01), Talwar et al.
patent: 6015745 (2000-01-01), Adkisson et al.
patent: 6262435 (2001-07-01), Plat et al.
patent: 6300243 (2001-10-01), Thakur
patent: 6403923 (2002-06-01), Tay et al.
patent: 6414364 (2002-07-01), Lane et al.
patent: 6569720 (2003-05-01), Kunii
patent: 6665858 (2003-12-01), Miyazaki
patent: 6812550 (2004-11-01), En et al.
patent: 6867080 (2005-03-01), Paton et al.
patent: 6875623 (2005-04-01), Niwayama et al.
patent: 6916690 (2005-07-01), Chang
patent: 7071530 (2006-07-01), Ding et al.
patent: 7344929 (2008-03-01), Mehrotra et al.
patent: 7589027 (2009-09-01), Lee
patent: 7745334 (2010-06-01), Press et al.
patent: 7871895 (2011-01-01), Divakaruni et al.
patent: 2004/0033666 (2004-02-01), Williams et al.
patent: 2004/0077149 (2004-04-01), Renau
patent: 2004/0084427 (2004-05-01), Talwar et al.
patent: 2004/0188801 (2004-09-01), Ehrichs
patent: 2004/0195626 (2004-10-01), Yamada et al.
patent: 2004/0259387 (2004-12-01), Yamazaki et al.
patent: 2005/0003638 (2005-01-01), Stolk
patent: 2005/0009344 (2005-01-01), Hwang et al.
patent: 2005/0059224 (2005-03-01), Im
patent: 2005/0085047 (2005-04-01), DeLoach et al.
patent: 2005/0173802 (2005-08-01), Tabara et al.
patent: 2005/0189340 (2005-09-01), Talwar et al.
patent: 2005/0191044 (2005-09-01), Aderhold et al.
patent: 2006/0099745 (2006-05-01), Hsu et al.
patent: 2006/0154475 (2006-07-01), Mehrotra et al.
patent: 2006/0228897 (2006-10-01), Timans
patent: 2007/0063223 (2007-03-01), Choi
patent: 2007/0069293 (2007-03-01), Kavalieros et al.
patent: 2007/0230553 (2007-10-01), Talbot et al.
patent: 2008/0230843 (2008-09-01), Zhang et al.
patent: 2009/0302414 (2009-12-01), Ebefors et al.
patent: 10329212 (2005-01-01), None
patent: 06-295923 (1994-10-01), None
patent: 2206141 (2003-06-01), None
patent: 9319484 (1993-09-01), None
patent: 2007038575 (2007-04-01), None
Anderson et al., U.S. Appl. No. 11/678,756, Notice of Allowance, Mar. 15, 2010, 3 pages.
Laviron et al., “Intra-Die Temperature Non Uniformity Related to Front Side Emissivity Dependence during Rapid Thermal Annealing”, 203RD ECS Meeting, Paris, Apr. 27-May 2, 2003, paper #880, pp. 1-9.
Anderson et al., U.S. Appl. No. 11/678,783, BUR920060028US1, Office Action Communication, Apr. 30, 2009, 12 pages.
Anderson et al., U.S. Appl. No. 11/678,745, BUR920060023US1, Office Action Communication, May 13, 2009, 19 pages.
Anderson et al., U.S. Appl. No. 11/869,768, BUR920060023US2. Office Action Communication, May 14, 2009, 26 pages.
PCT International Search Report and Written Opinion dated Aug. 27, 2009, pp. 1-12.
Anderson et al., U.S. Appl. No. 11/869,768, BUR920060023US2, Office Action Communication, Nov. 24, 2009, 5 pages.
Anderson et al., U.S. Appl. No. 11/678,745, BUR920060023US1, Notice of Allowance, Nov. 18, 2009, 10 pages.
Anderson et al., U.S. Appl. No. 11/678,799, BUR920060130US1, Notice of Allowance, Feb. 17, 2010, 4 pages.
Anderson et al., U.S. Appl. No. 11/678,799, BUR920060130US1, Office Action Communication, Apr. 15, 2009, 19 pages.
Anderson et al., U.S. Appl. No. 11/678,799, BUR920060130, Office Action Communication, Oct. 27, 2009, 15 pages.
U.S. Appl. No. 12/634,820, BUR920060023US3, Notice of Allowance, Oct. 27, 2010, 9 pages.
Anderson et al., U.S. Appl. No. 12/728,463, BUR920060024US2, Office Action Communication, Feb. 9, 2011, 17 pages.

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