Localized plasma processing

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156345, 118723R, 21912136, 31323131, 31511121, H01L 2100

Patent

active

053022378

ABSTRACT:
An apparatus and method for down-stream plasma processing (both etching and plasma enhanced deposition) are disclosed wherein only a portion of the surface area of a substrate is exposed to the low pressure, reactive gaseous processing environment. The remainder of the substrate remains outside a small enclosed processing area, thus leaving these areas unexposed to the processing agents and providing physical access for monitoring equipment or the like, for example when in-situ monitoring during processing is desired. Etch rates of up to 6 .mu.m/h have been obtained.

REFERENCES:
patent: 3969813 (1976-07-01), Minetti et al.
patent: 4359360 (1982-11-01), Harris et al.
patent: 4931307 (1990-06-01), Sugita et al.
"Rapid, Nonmechanical Damage-Free Figuring of Optical Surfaces Using a Pla-Assisted Chemical Etching (PACE): Part I"; Zarowin et al.; Proc. SPIE; vol. 966; pp. 91-97; (1989).
"Rapid, Nonmechanical Damage-Free Figuring of Optical Surfaces Using Plasma-Assisted Chemical Etching (PACE)"; Bollinger et al.; Proc. SPIE; vol. 966; pp. 82-90 (1989).
"Localized Plasma Etching For Device Optimization"; Larson et al.; J. Vac. Sci.; vol. 10; No. 1; (Feb. 1992); pp. 27-29.

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