Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-08-14
2007-08-14
Le, Thao P. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S315000, C257SE21662, C257SE21679, C257SE27102
Reexamination Certificate
active
11365147
ABSTRACT:
Provided are a local SONOS-type memory device and a method of manufacturing the same. The device includes a gate oxide layer formed on a silicon substrate; a conductive spacer and a dummy spacer, which are formed on the gate oxide layer and separated apart from each other, the conductive spacer and the dummy spacer having round surfaces that face outward; a pair of insulating spacers formed on a sidewall of the conductive spacer and a sidewall of the dummy spacer which face each other; an ONO layer formed in a self-aligned manner between the pair of insulating spacers; a conductive layer formed on the ONO layer in a self-aligned manner between the pair of insulating spacers; and source and drain regions formed in the silicon substrate outside the conductive spacer and the dummy spacer.
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Choi Yong-suk
Kim Seong-gyun
Yoon Seung-beom
Le Thao P.
Mills & Onello LLP
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