Local sensing and feedback for an SRAM array

Details Local sensing and feedback for an SRAM array Local sensing and feedback for an SRAM array

2009-07-08

2011-11-22

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Read/write circuit

Particular read circuit

C365S228000

Reexamination Certificate

active

08064275

ABSTRACT:
An integrated circuit having an SRAM array includes SRAM cells arranged in rows and columns, and a global read circuit connected to globally read SRAM cells corresponding to accessed rows and columns of the SRAM array. The SRAM array also includes a separate, local sense and feedback circuit connected to a local column of the SRAM array, wherein a sensing portion indicates a memory state of an SRAM cell in an accessed row of the local column and a feedback portion rewrites the memory state back into the SRAM cell. Additionally, a method of operating an integrated circuit having an SRAM array includes providing an SRAM cell in an addressed condition of the SRAM array. The method also includes locally sensing a current memory state of the SRAM cell and locally feeding back to the SRAM cell to retain the memory state during the addressed condition.

REFERENCES:
patent: 6442060 (2002-08-01), Leung et al.
patent: 2004/0085841 (2004-05-01), Lim et al.

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