Local pressure sensing in a plasma processing system

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

Reexamination Certificate

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C250S492100

Reexamination Certificate

active

07638781

ABSTRACT:
A plasma processing system includes a process chamber, a source configured to generate a plasma in the process chamber, a platen configured to support a workpiece in the process chamber, and a pressure sensor positioned adjacent to the workpiece. The pressure sensor is configured to monitor a local pressure adjacent to the workpiece. A method includes generating a plasma in a process chamber, supporting a workpiece in the process chamber, and monitoring a local pressure adjacent to the workpiece with a pressure sensor positioned adjacent to the workpiece.

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