Local oxidation of silicon (LOCOS) method employing graded...

Details Local oxidation of silicon (LOCOS) method employing graded... Local oxidation of silicon (LOCOS) method employing graded...

2005-09-27

2005-09-27

Wilson, Christian (Department: 2891)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

C438S444000, C438S791000

Reexamination Certificate

active

06949448

ABSTRACT:
A method for forming a local oxidation of silicon (LOCOS) isolation region on a silicon substrate. A series of patterned graded oxidation mask layers formed of a material comprising silicon, oxygen and nitrogen is formed. The series of patterned graded oxidation mask layers has a comparatively high nitrogen:oxygen atomic ratio within a series of first contiguous sub-layers; a comparatively high nitrogen:oxygen atomic ratio within a series of third contiguous sub-layers; and a comparatively low nitrogen:oxygen atomic ratio within a series of second contiguous sub-layers.

REFERENCES:
patent: 4333964 (1982-06-01), Ghezzo
patent: 4952525 (1990-08-01), van der Plas
patent: 5260229 (1993-11-01), Hodges et al.
patent: 5294563 (1994-03-01), Rao
patent: 5616401 (1997-04-01), Kobayashi et al.
patent: 5661072 (1997-08-01), Jeng
patent: 5846596 (1998-12-01), Shim et al.
patent: 6033971 (2000-03-01), Motonami et al.
patent: 6051511 (2000-04-01), Thakur et al.
patent: 6071793 (2000-06-01), Peidous et al.
patent: 6090686 (2000-07-01), Brady et al.
patent: 6248669 (2001-06-01), Ichikawa et al.
Stanley Wolf, “Silicon Processing for The VLSI Era”, vol. 2 : Process Integration, Lattice Press (Sunset Beach, CA), 1990, pp 33-35.

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