Local multilayered metallization

Details Local multilayered metallization Local multilayered metallization

2004-08-31

2008-05-20

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S653000, C438S687000

Reexamination Certificate

active

07375026

ABSTRACT:
An interconnect comprises a trench and a number of metal layers above the trench. The trench has a depth and a width. The depth is greater than a critical depth, and the number of metal layers is a function of the width. In an alternate embodiment, a metallization structure having a trench including a metal layer and a second trench including a plurality of metal layers coupled to the metal layer is disclosed. The metal layer is highly conductive, and at least one of the plurality of metal layers is a metal layer that is capable of being reliably wire-bonded to a gold wire. The trench is narrower than the second trench, and at least one of the plurality of metal layers is copper or a copper alloy.

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