Local metallization and use thereof in semiconductor devices

Details Local metallization and use thereof in semiconductor devices Local metallization and use thereof in semiconductor devices

2009-06-11

2010-10-05

Stark, Jarrett J (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S598000, C438S618000, C438S669000, C257SE21538, C257SE21585, C257SE21586

Reexamination Certificate

active

07807570

ABSTRACT:
An embodiment of the invention provides a method of creating local metallization in a semiconductor structure, and the use of local metallization so created in semiconductor structures. In one respect, the method includes forming an insulating layer on top of a semiconductor substrate; creating a plurality of voids inside the insulating layer, with the plurality of voids spanning across a predefined area and being substantially confined within a range of depth below a top surface of the insulating layer; creating at least one via hole in the insulating layer, with the via hole passing through the predefined area; and filling the via hole, and the plurality of voids inside the insulating layer through at least the via hole, with a conductive material to form a local metallization. A semiconductor structure having the local metallization is also provided.

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