Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-04-11
1996-02-06
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257384, 257385, 257412, 257754, 257755, 257756, 257758, 257903, H01L 2976, H01L 2994, H01L 2711
Patent
active
054897971
ABSTRACT:
An interconnect structure, and method for forming same, is suitable for use in integrated circuits such as SRAM devices. The structure uses masking of a polycrystalline silicon interconnect level to move a P-N junction to a region within a polycrystalline silicon interconnect line, rather than at the substrate. This P-N junction can then be shorted out using a refractory metal silicide formed on the polycrystalline silicon interconnect structure.
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Bryant Frank R.
Chan Tsiu C.
Walters John L.
Hill Kenneth C.
Jorgenson Lisa K.
Ngo Ngan V.
Robinson Richard K.
SGS-Thomson Microelectronics Inc.
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