Local interconnect formed using silicon spacer

Details Local interconnect formed using silicon spacer Local interconnect formed using silicon spacer

1999-01-28

2000-11-21

Monin, Jr., Donald L.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438655, 257382, 257384, 257754, 257757, H01L 2144

Patent

active

061502669

ABSTRACT:
A local interconnect structure that includes a silicon spacer. After deposition of polysilicon gates and formation of spacers on a semiconductor substrate, photolithography and oxide etch steps are performed to remove a portion of a spacer along a segment of the gate where local interconnection is to be formed. A thin screen oxide layer is deposited over the wafer, followed by the formation of diffusion regions. A silicon layer (either amorphous or polycrystalline) is then deposited. The silicon layer is then selectively etched so as to form a silicon spacer along the segment of the gate where local interconnection is to be formed. A conventional SALICIDE process is performed, leading to simultaneous silicidation of the diffusion region, the gate, and the silicon spacer. The resulting local interconnect electrically connects the gate and the diffusion region.

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