Local dry etching method

Details Local dry etching method Local dry etching method

2005-06-21

2005-06-21

Olsen, Allan (Department: 1763)

Etching a substrate: processes

Planarizing a nonplanar surface

C216S060000, C216S067000, C438S706000

Reexamination Certificate

active

06908566

ABSTRACT:
In a local dry etching method, position-thickness data of a semiconductor wafer is previously obtained by measuring the wafer surface, components of position-thickness data shorter than a predetermined spatial wavelength are cut off by filtering and nozzle-wafer relative speed for planarizing the surface is calculated using the filtered data.

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patent: 2002/0148560 (2002-10-01), Carr
patent: 2003/0062335 (2003-04-01), Brewer
patent: 09-027482 (1997-01-01), None
M. Yanagisawa et al, “Numerically Controlled Dry Etching Technology for Flattening of Si Wafer which Employs SF6/H2 Downstream Plasma,” Japan Journal of Applied Physics., vol. 41, Part 1, No. 5A, pp. 2791-2795, May 2002.

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