Local bank write buffers for accelerating a phase-change memory

Details Local bank write buffers for accelerating a phase-change memory Local bank write buffers for accelerating a phase-change memory

2007-05-15

2008-12-30

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S230030, C365S189050

Reexamination Certificate

active

07471556

ABSTRACT:
Phase-change memory (PCM) cells store data using alloy resistors in high-resistance amorphous and low-resistance crystalline states. The time of the memory cell's set-current pulse can be 100 ns, much longer than read or reset times. The write time thus depends on the write data. The very long write-1 time may require wait states. To eliminate wait states for sequential accesses, the PCM cells are divided into 16 banks. Each bank has its own bank write latch that stores data locally at the bank while the bank is being written. Data lines to the banks are freed up to transfer data to other banks once the data is written into the local bank write latch, allowing the long set-current pulse to be applied locally to slowly grow crystals in the alloy resistors. External host data are buffered and applied to the data lines by an array data mux.

REFERENCES:
patent: 5933365 (1999-08-01), Klersy et al.
patent: 6512241 (2003-01-01), Lai
patent: 6869883 (2005-03-01), Chiang et al.
patent: 7026639 (2006-04-01), Cho et al.
patent: 7078273 (2006-07-01), Matsuoka et al.
patent: 7099179 (2006-08-01), Rinerson et al.
patent: 7103718 (2006-09-01), Nickel et al.
patent: 7259983 (2007-08-01), Bill et al.
patent: 2003/0223285 (2003-12-01), Khouri et al.
patent: 2004/0228163 (2004-11-01), Khouri et al.
patent: 2004/0248339 (2004-12-01), Lung
patent: 2004/0256610 (2004-12-01), Lung
patent: 2005/0185572 (2005-08-01), Resta et al.
patent: 2006/0018183 (2006-01-01), De Sandre et al.
patent: 2006/0097239 (2006-05-01), Hsiung
patent: 2006/0126381 (2006-06-01), Khouri et al.
patent: 2006/0203542 (2006-09-01), Kurotsuchi et al.
patent: 2006/0274574 (2006-12-01), Choi et al.

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