Semiconductor device manufacturing: process – Having selenium or tellurium elemental semiconductor component
Reexamination Certificate
2008-01-29
2008-01-29
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Having selenium or tellurium elemental semiconductor component
C257S042000, C257S043000, C257SE31027, C257SE31029, C438S084000, C438S085000, C438S104000, C501S152000, C117S008000
Reexamination Certificate
active
10505219
ABSTRACT:
Disclosed is a method of producing an LnCuOX single-crystal thin film (wherein Ln is at least one selected from the group consisting of lanthanide elements and yttrium, and X is at least one selected from the group consisting of S, Se and Te), which comprises the steps of growing a base thin film on a single-crystal substrate, depositing an amorphous or polycrystalline LnCuOX thin film on the base thin film to form a laminated film, and then annealing the laminated film at a high temperature of 500° C. or more. While a conventional LnCuOX film produced by growing an amorphous film through a sputtering process under appropriate conditions and then annealing the film at a high temperature was unexceptionally a polycrystalline substance incapable of achieving high emission efficiency and electron mobility required for a material of light-emitting devices or electronic devices, the method of the present invention can grow a thin film with excellent crystallinity suitable as a single crystal to an building black of light-emitting diodes, semiconductor leasers, filed-effect transistors, or a hetero-bipolar transistors.
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Hiramatsu Hidenori
Hirano Masahiro
Hosono Hideo
Orita Masahiro
Ota Hiromichi
Baumeister B. William
Japan Science and Technology Agency
Such Matthew W.
Westerman, Hattori, Daniels & Adrian , LLP.
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