Lithography systems and methods for operating the same

Radiant energy – Irradiation of objects or material – Ion or electron beam irradiation

Reexamination Certificate

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C250S492200, C250S492220, C438S798000, C438S795000

Reexamination Certificate

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07576341

ABSTRACT:
A lithography system and method for operating the same. The lithography system may include a cathode adapted to emit an electron beam, a beam-homogenizing structure, capable of increasing at least one of the uniformity and energetic of the electron beam, and a mask adapted to accelerate the electron beam to form a pattern on a wafer.

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Bohlen, et al (“Electron-Beam Proximity Printing—A New High-Speed Lithography Method for Submicron Structures” IBM J. Res. Develp vol. 26, No. 5, Sep. 1982).
H. Bohlen et al., Electron-Beam Proximity Printing—A New High-Speed Lithography Method for Submicron Structures, Sep. 1982, IBM J. Res. Develop., vol. 26, No. 5, pp. 568-579.

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