Lithography simulation method, program and semiconductor...

Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design

Reexamination Certificate

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C716S030000

Reexamination Certificate

active

07831953

ABSTRACT:
A lithography simulation method which predicts the result that a pattern formed on a mask is transferred onto a sample by use of a simulation based on pattern data of the mask includes subjecting a mask layout containing a pattern whose periodicity is disturbed to the simulation. At this time, a calculation area of pattern data used for the simulation is set to an integral multiple of minimum periodic length of the mask layout.

REFERENCES:
patent: 6553562 (2003-04-01), Capodieci et al.
patent: 7093229 (2006-08-01), Pang et al.
patent: 7266803 (2007-09-01), Chou et al.
patent: 2004/0115541 (2004-06-01), Yamaguchi et al.
patent: 2006/0078805 (2006-04-01), Hansen
patent: 2006/0129967 (2006-06-01), Tanaka et al.
V. Ivin et al., “Fast Modeling of 3D Planar Resist Images for High NA Projection Lithography,” SPIE vol. 3051, pp. 567-577.

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