Lithography masks and methods

Details Lithography masks and methods Lithography masks and methods

2005-08-08

2010-12-07

Rosasco, Stephen (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S311000, C438S618000

Reexamination Certificate

active

07846616

ABSTRACT:
Lithography masks and methods of lithography for manufacturing semiconductor devices are disclosed. Forbidden pitches are circumvented by dividing a main feature into a set of two or more sub-features. The sum of the widths of the sub-features and the spaces between the sub-features is substantially equal to the width of the main feature. The set of two or more sub-features comprise a plurality of different distances between an adjacent set of two or more sub-features. At least one of the plurality of distances comprises a pitch that is resolvable by the lithography system, resulting in increased resolution for the main features, improved critical dimension (CD) control, and increased process windows.

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