Lithography mask with a .pi.-phase shifting attenuator

Details Lithography mask with a .pi.-phase shifting attenuator Lithography mask with a .pi.-phase shifting attenuator

1987-02-25

1989-12-26

Howell, Janice A.

X-ray or gamma ray systems or devices

Specific application

Lithography

378 34, 2505051, B05D 306, G03F 900

Patent

active

048903094

ABSTRACT:
The mask includes an attenuator which passes a fraction of the incident electromagnetic radiation and phase shifts the radiation relative to the radiation passing through open features of the mask by approximately an odd multiple of .pi. radians. This phase shifting of light passing through the attenuator by .pi. radians reduces the edge blurring that results from diffraction effects. The present invention steepens the slope of the intensity profile at the edges of features in x-ray lithographic replication relative to the slope obtained with a conventional x-ray mask. The steeper slope is a highly significant advantage because it permits improved linewidth control.

REFERENCES:
patent: 3743842 (1973-07-01), Smith et al.
patent: 4360586 (1982-11-01), Flanders et al.
patent: 4388728 (1983-06-01), Emmanuel
patent: 4488799 (1984-08-01), Hams et al.
patent: 4514857 (1985-04-01), Kimura et al.
"The Phase-Shifting Mask II: Imaging Simulations and Submicrometer Resist Exposures", M. D. Levenson et al., IEEE Trans. on Elec. Dev. vol. 31, No. 6, (1984).
"Electron-Beam X-ray, & Ion-Beam Techniques for Submicrometer Lithographies V", R. Radaelli et al., SPIE, vol. 632.
"High-Resolution X-Ray Lithography Using a Phase Mask", Y. Yamakoshi et al., App. Optics, vol. 25, No. 6, (1986).
"Optical Imaging with Phase Shift Masks", M. Prouty et al., SPIE, vol. 420, (1984).

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