Lithographic proximity correction through subset feature modific

Details Lithographic proximity correction through subset feature modific Lithographic proximity correction through subset feature modific

1997-10-20

1999-09-28

Young, Christopher G.

Radiation imagery chemistry: process, composition, or product th

Including control feature responsive to a test or measurement

430296, 430942, G03F 900

Patent

active

059586354

ABSTRACT:
Lithographic Proximity Correction (LPC) shapes are added (503) to a layer of a layout database file (501). Geometric criteria such as feature width are then used to filter the added LPC shapes (502). The LPC shapes are then modified (505) by determining which LPC shapes are within a predetermined distance from a shape in a layer of the second data base (504). The database file, including the modified LPC shapes, is then used to manufacture a set of lithographic masks (506). The lithographic masks are then used to pattern a set of wafers in the manufacture of integrated circuits (507).

REFERENCES:
patent: 4895780 (1990-01-01), Nissan-Cohen et al.
patent: 5242770 (1993-09-01), Chen et al.

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