Metal treatment – Compositions – Heat treating
Patent
1985-05-23
1987-05-26
Ozaki, George T.
Metal treatment
Compositions
Heat treating
148171, 148175, 148188, 29569L, 29576E, H01L 21324
Patent
active
046683062
ABSTRACT:
A semiconductor device having an uneven distribution of impurity concentration is manufactured easily and with good reproducibility from a wafer of a Group III-V or Group II-VI compound semiconductor by first forming a thin layer of impurity in a desired region of a principal surface of the wafer by, for example, an ion-implantation technique, and then subjecting the wafer to heat treatment under a controlled vapor pressure of at least one of the component elements of the compound semiconductor in order to maintain the stoichiometric composition of the impurity layer.
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Ozaki George T.
Zaidan Hojin Handotai Kenkyu Shinkokai
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