Method of manufacturing a semiconductor device having unhomogene

Metal treatment – Compositions – Heat treating

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148171, 148175, 148188, 29569L, 29576E, H01L 21324

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active

046683062

ABSTRACT:
A semiconductor device having an uneven distribution of impurity concentration is manufactured easily and with good reproducibility from a wafer of a Group III-V or Group II-VI compound semiconductor by first forming a thin layer of impurity in a desired region of a principal surface of the wafer by, for example, an ion-implantation technique, and then subjecting the wafer to heat treatment under a controlled vapor pressure of at least one of the component elements of the compound semiconductor in order to maintain the stoichiometric composition of the impurity layer.

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Nikura et al., Electronics Letters, vol. 14, No. 1, Jan. 5, 1978, pp. 9 and 10.

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