Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2006-06-06
2006-06-06
Wells, Nikita (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492100, C378S119000, C378S143000
Reexamination Certificate
active
07057190
ABSTRACT:
A lithographic projection apparatus for EUV lithography includes a foil trap, or channel barrier. The foil trap forms an open structure after the source to let the radiation pass unhindered. The foil trap is configured to be rotatable around an optical axis. By rotating the foil trap, an impulse transverse to the direction of propagation of the radiation can be transferred on debris present in the beam. This debris will not pass the foil trap. In this way, the amount of debris on the optical components downstream of the foil trap is reduced. The foil trap may be alternately rotated around the optical axis in a first direction and a second direction opposite the first direction.
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Bakker Levinus Pieter
Banine Vadim Yevgenyevich
Schuurmans Frank Jeroen Pieter
ASML Netherlands B.V.
Pillsbury Winthrop Shaw & Pittman LLP
Smith II Johnnie L
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